產(chǎn)品概述/Product Introduction：
本設(shè)備主要用于氧化鎵（Ga2O3）、氮化鋁（AIN）等外延生長(zhǎng)。
This device is mainly used for epitaxial growth of gallium oxide (Ga2O3), aluminum nitride (AIN), and other materials.
提供2英寸驗(yàn)證工藝
Provide 2 inches validation process.
產(chǎn)品特點(diǎn)/Product Characteristics：
? 襯底: 2-8英寸
Substrate size: 2-8 inches
? 數(shù)量: 1片/多片
Quantity: 1pcs/multiple pcs
? 控溫精度: 精度高，溫區(qū)穩(wěn)定性好
Temperature control precision : High temperature control precision and good statlity in temperature zone.
? 結(jié)構(gòu): 立式/臥式可選，滿足多種尺寸襯底多種操作方式需要
Structure: Vtica/horizontal structual is optional, can meet theneeds of customerswith various sizes ofsubstrates and various operation modes.
? 設(shè)備保護(hù)功能: 硬件保護(hù)+軟件互鎖
Facility protection: Hardware protection+software interlock.